Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Hsing LEE, Chih-Sheng CHANG, Wilman TSAI, Chia-Wen CHANG, Ling-Yen YEH, Carlos H. DIAZ
Life of this patent
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Abstract
A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.
Claims20
A semiconductor device, comprising:
- a first potential supply line for supplying a first potential;
- a second potential supply line for supplying a second potential lower than the first potential;
- a functional circuit including a PMOS transistor and a NMOS transistor;
- and
- a switch disposed between the first potential supply line and one of the PMOS transistor and the NMOS transistor of the functional circuit, wherein:
- a voltage potential of the first potential supply line is supplied to the functional circuit via the switch,
- the switch includes a negative capacitance (NC) MOS FET showing a negative capacitance, and the NMOS and PMOS transistors are normal MOS FETs,
- a gate dielectric layer of the NCFET includes a first dielectric layer and a second dielectric layer disposed over the first dielectric layer, and
- the second dielectric layer includes a ferroelectric material.
A semiconductor device, comprising:
- a first potential supply line for supplying a first potential;
- a second potential supply line for supplying a second potential lower than the first potential;
- a functional circuit including a CMOS circuit constituted by normal MOS FETs;
- and
- a switch disposed between the first potential supply line and the CMOS circuit of the functional circuit, wherein:
- a voltage potential of the first potential supply line is supplied to the CMOS circuit via the switch, and
- the switch includes a negative capacitance (NC) MOS FET,
- a gate dielectric layer of the NCFET includes a first dielectric layer and a second dielectric layer disposed over the first dielectric layer, a gate electrode disposed over the second dielectric layer,
- the second dielectric layer includes a ferroelectric material, and
- a top of the first and second gate dielectric layers is below a top of the gate electrode.
A semiconductor device, comprising:
- a first potential supply line for supplying a first potential;
- a first internal potential supply line and a second internal potential supply line separated from the first internal potential supply line, both for supplying the first potential;
- a second potential supply line for supplying a second potential lower than the first potential;
- a first functional circuit including a PMOS transistor and a NMOS transistor;
- a second functional circuit including a PMOS transistor and a NMOS transistor;
- a first negative capacitance (NC) FET disposed between the first potential supply line and the first internal potential supply line;
- and
- a second NC FET disposed between the first potential supply line and the second internal potential supply line, wherein:
- the NMOS and PMOS transistors are normal MOS FETs, and
- each of the first and second NC FETs includes a first dielectric layer and a second dielectric layer disposed over the first dielectric layer, a gate electrode disposed over the second dielectric layer,
- the second dielectric layer includes a ferroelectric material, and
- a top of the first and second gate dielectric layers is below a top of the gate electrode.
Dependencies are inferred from the claim text.