Thin film transistor substrate, shift register and display device
AssigneeLG Display Co., Ltd.
InventorsSeHee PARK, InTak CHO, DaeHwan KIM, JuHeyuck BAECK, Jiyong NOH
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Abstract
A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.
Claims19
A thin film transistor substrate comprising:
- a first buffer layer disposed on a base substrate;
- a second buffer layer disposed on the first buffer layer;
- a semiconductor layer disposed on the second buffer layer;
- and
- a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer,
- wherein a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.
A thin film transistor substrate comprising:
- a semiconductor layer disposed on a base substrate;
- a first gate insulating film disposed on the semiconductor layer;
- a second gate insulating film disposed on the first gate insulating film;
- and
- a gate electrode disposed on the second gate insulating film,
- wherein a surface oxygen concentration of the second gate insulating film is higher than a surface oxygen concentration of the first gate insulating film.
A display device comprising:
- a shift register disposed on a base substrate;
- and
- a pixel connected with the shift register,
- wherein the shift register includes a stage connected with the pixel through a gate line,
- wherein the stage includes at least one thin film transistor,
- wherein the at least one thin film transistor includes:
- a first buffer layer disposed on the base substrate;
- a second buffer layer disposed on the first buffer layer;
- a semiconductor layer disposed on the second buffer layer;
- and
- a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, and
- wherein a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.
A display device comprising:
- a plurality of pixels disposed on a base substrate,
- wherein each of the plurality of pixels includes:
- a pixel driver disposed on the base substrate;
- and
- a display element connected with the pixel driver,
- wherein the pixel driver includes at least one thin film transistor,
- wherein the at least one thin film transistor includes:
- a first buffer layer disposed on the base substrate;
- a second buffer layer disposed on the first buffer layer;
- a semiconductor layer disposed on the second buffer layer;
- and
- a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, and
- wherein a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.
The display device according to claim 19, wherein a dipole moment is formed between the first gate insulating film and the second gate insulating film.
Dependencies are inferred from the claim text.