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US 2020/0052081 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHan-Pin CHUNG
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Abstract
A method of fabricating a semiconductor device includes forming a plurality of semiconductor fins on a substrate. A liner layer is deposited on the semiconductor fins and on the substrate conformally. The semiconductor fins are patterned to form a plurality of active regions on the substrate after the liner layer is deposited.
Claims21
A method, comprising:
- forming a plurality of semiconductive fins on a substrate;
- depositing a liner layer on the semiconductive fins and on the substrate conformally;
- and
- after depositing the liner layer, patterning the semiconductive fins to form a plurality of active regions on the substrate.
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8-20. (canceled)
A method, comprising:
- depositing a liner layer on a semiconductive fin on a substrate conformally;
- after depositing the liner layer, removing a portion of the semiconductive fin and a portion of the liner layer thereon such that a first active region and a second active region are end-to-end arranged on the substrate;
- and
- depositing a dielectric material between and over the first active region and the second active region.
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A method, comprising:
- forming a semiconductive fin on a substrate, wherein the semiconductive fin has a top surface and a pair of side surfaces interconnected by a first end surface and a second end surface;
- depositing a liner layer on the top surface, the pair of side surface and the first end surface while leaving the second end surface uncovered by the liner layer;
- and
- depositing a dielectric layer over the semiconductive fin and directly in contact with the second end surface of the semiconductive fin.
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Dependencies are inferred from the claim text.