Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng CHANG, Chih-Han Cheng LIN, Horng-Huei TSENG
Life of this patent
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Abstract
A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductor, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductor is electrically connected to the source drain structure. The protection layer is present between the conductor and the first spacer and on a top surface of the first gate structure.
Claims20
A semiconductor structure, comprising:
- a first dielectric layer;
- a second dielectric layer;
- a protection layer over the second dielectric layer;
- a third dielectric layer over the protection layer;
- and
- a conductor extending through the third dielectric layer, the protection layer, and the second dielectric layer, wherein a first portion of the protection layer and a first portion of the second dielectric layer are between the conductor and the first dielectric layer.
A semiconductor structure, comprising:
- a first gate structure;
- a source/drain structure adjacent the first gate structure;
- a first dielectric layer over the source/drain structure;
- a protection layer over the first gate structure and the source/drain structure, wherein the protection layer is separated from the source/drain structure by the first dielectric layer;
- and
- a conductor extending through the protection layer and the first dielectric layer and over the source/drain structure.
A semiconductor structure, comprising:
- a first dielectric layer;
- a protection layer over the first dielectric layer, wherein a bottommost surface of the protection layer contacts an uppermost surface of the first dielectric layer;
- a second dielectric layer over the protection layer;
- and
- a conductor extending through the second dielectric layer, the protection layer, and the first dielectric layer.
Dependencies are inferred from the claim text.