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US 2020/0052078 A1Published application
Low collector contact resistance heterojunction bipolar transistors
AssigneeQUALCOMM Incorporated
InventorsGengming TAO, Bin YANG, Xia LI
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Abstract
In certain aspects, a heterojunction bipolar transistor (HBT) comprises a collector mesa, a base mesa on the collector mesa, and an emitter mesa on the base mesa. The base mesa has a tapered sidewall tapering from a wide bottom to a narrow top. The HBT further comprises a collector contact on a portion of the collector mesa and extending to a portion of the tapered sidewall of the base mesa.
Claims12
A method, comprising:
- providing an HBT comprising a collector mesa, a base mesa on the collector mesa, and an emitter mesa on the base mesa, wherein the base mesa has a tapered sidewall tapering from a wide bottom to a narrow top;
- forming a photoresist layer on the HBT;
- patterning the photoresist layer with one or more photoresist openings, wherein the one or more photoresist openings expose a first region of the collector mesa and a first region of the tapered sidewall of the base mesa;
- and
- depositing a collector contact metal over the first region of the collector mesa and the first region of the tapered sidewall of the base mesa.
2 more elements
Dependencies are inferred from the claim text.