Method for Forming III-Nitride Semiconductor Device and the III-Nitride Semiconductor Device
AssigneeSuzhou Han Hua Semiconductor Co., Ltd.
InventorsXian-Feng Ni, Qian Fan, Wei He
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Abstract
The present disclosure includes but is not limited to the III-Nitride semiconductor devices including a barrier layer, a gallium nitride or indium gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a patterned thermoconductive layer having a thermal conductivity of at least 500 W/(m-K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.
Claims20
A method for fabricating a III-Nitride semiconductor device, comprising:
- providing a substrate;
- forming a nucleation layer on the substrate;
- forming a back barrier layer on the nucleation layer;
- forming a patterned dielectric layer on the back barrier layer;
- forming a patterned thermoconductive layer on the patterned dielectric layer;
- wherein the pattern of the thermoconductive layer is the same as the pattern of the patterned dielectric layer;
- wherein the back barrier layer is formed of Group III-Nitride material.
A III-Nitride semiconductor device, comprising:
- a patterned dielectric layer positioned on a patterned thermoconductive layer;
- and
- a back barrier layer positioned on the patterned dielectric layer;
- wherein the pattern of the thermoconductive layer is the same as the pattern of the patterned dielectric layer;
- wherein the back barrier layer is formed of Group III-Nitride material.
Dependencies are inferred from the claim text.