Semiconductor structure and method for preparing the same
AssigneeNanya Technology Corporation
InventorChung-Lin HUANG
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Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a plurality of first isolation structures disposed on the substrate, and a plurality of first semiconductor islands disposed on the substrate and separated from each other by the plurality of first isolation structures. In some embodiments, each of the plurality of first isolation structures includes a first bottom surface in contact with the substrate and a first top surface opposite to the first bottom surface. In some embodiments, a width of the first bottom surface is greater than a width of the first top surface.
Claims20
A semiconductor structure comprising:
- a substrate;
- a plurality of first isolation structures disposed on the substrate;
- and
- a plurality of first semiconductor islands disposed on the substrate and separated from each other by the plurality of first isolation structures,
- wherein each of the plurality of first isolation structures to comprises a first bottom surface in contact with the substrate and a first top surface opposite to the first bottom surface, and a width of the first bottom surface is greater than a width of the first top surface.
A method for preparing a semiconductor structure, comprising:
- providing a substrate;
- forming a mesh-like isolation structure on the substrate, wherein the mesh-like isolation structure comprises a plurality of first openings exposing the substrate;
- and
- forming a plurality of first semiconductor islands to fill the plurality of first openings,
- wherein each of the plurality of first semiconductor islands has a bottom surface in contact with the substrate and a top surface opposite to the bottom surface, and a width of the top surface is greater than a width of the bottom surface.
Dependencies are inferred from the claim text.