Light-Emitting Device and Display Device

A display device comprising:

• a transistor having a single crystal semiconductor layer:
• a first light-emitting element comprising:
• a first electrode that is reflective;
• a first conductive layer over the first electrode;
• a first light-emitting layer over the first conductive layer;
• a second light-emitting layer over the first light-emitting layer;
• and
• a second electrode over the second light-emitting layer;
• a second light-emitting element comprising:
• a third electrode that is reflective;
• a second conductive layer over the third electrode;
• the first light-emitting layer over the second conductive layer;
• the second light-emitting layer over the first light-emitting layer;
• and
• the second electrode over the second light-emitting layer;
• a first color filter overlapping with the first light-emitting element and having a first central wavelength of a first wavelength range in which the first color filter has a transmittance of 50% or higher in a visible wavelength range;
• a second color filter overlapping with the second light-emitting element and having a second central wavelength of a second wavelength range in which the second color filter has a transmittance of 50% or higher in the visible light range;
• and
• a filler between the first light-emitting element and the first color filter,
• wherein:
• the single crystal semiconductor layer comprises silicon or silicon carbine,
• the first electrode and the third electrode comprise one of aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, and palladium,
• the second electrode comprises one of indium oxide, indium tin oxide, an indium oxide-zinc oxide alloy, zinc oxide, zinc oxide with gallium added, and graphene, and
• the filler comprises one of an inert gas, an organic resin, and a sealant.

A display device comprising:

• a transistor having a single crystal semiconductor layer:
• a first light-emitting element comprising:
• a first electrode that is reflective;
• a first conductive layer over the first electrode;
• a first light-emitting layer over the first conductive layer;
• a second light-emitting layer over the first light-emitting layer;
• a third light-emitting layer over the second light-emitting layer;
• and
• a second electrode over the third light-emitting layer;
• a second light-emitting element comprising:
• a third electrode that is reflective;
• a second conductive layer over the third electrode;
• the first light-emitting layer over the second conductive layer;
• the second light-emitting layer over the first light-emitting layer;
• the third light-emitting layer over the second light-emitting layer;
• and
• the second electrode over the third light-emitting layer;
• a third light-emitting element comprising:
• a fourth electrode is reflective;
• a third conductive layer over the fourth electrode;
• the first light-emitting layer over the third conductive layer;
• the second light-emitting layer over the first light-emitting layer;
• the third light-emitting layer over the second light-emitting layer;
• and
• the second electrode over the third light-emitting layer;
• a first color filter overlapping with the first light-emitting element and having a first central wavelength of a first wavelength range in which the first color filter has a transmittance of 50% or higher in a visible wavelength range;
• a second color filter overlapping with the second light-emitting element and having a second central wavelength of a second wavelength range in which the second color filter has a transmittance of 50% or higher in the visible light range;
• a third color filter overlapping with the third light-emitting element and having a third central wavelength of a third wavelength range in which the third color filter has a transmittance of 50% or higher in the visible wavelength range, and
• a filler between the first light-emitting element and the first color filter,
• wherein:
• the single crystal semiconductor layer comprises silicon or silicon carbine,
• the first electrode, the third electrode and the fourth electrode comprise one of aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, and palladium,
• the second electrode comprises one of indium oxide, indium tin oxide, an indium oxide-zinc oxide alloy, zinc oxide, zinc oxide with gallium added, and graphene, and
• the filler comprises one of an inert gas, an organic resin, and a sealant.