Image sensor and method of fabricating thereof

An image sensor, comprising:

• a first photodiode including a first electrode and a second electrode;
• a second photodiode below the first photodiode;
• a first contact plug connected to the first electrode;
• a via connected to the first contact plug;
• a second contact plug connected to the via;
• an interconnection layer in an interlayer insulating layer and connected to the second contact plug;
• and
• an interconnection via connected to the interconnection layer and a storage node in a substrate,
• wherein the first electrode has an increasing width from the first contact plug toward an organic photoelectric conversion layer.

An image sensor, comprising:

• a substrate having a storage node;
• a first photodiode including a first electrode, a second electrode, an organic photoelectric conversion layer between the first electrode and the second electrode, and an electrode insulating layer having a recess region on which the first electrode is disposed;
• and
• a second photodiode below the first photodiode,
• wherein the first electrode has an increasing width from a first contact plug toward the organic photoelectric conversion layer, and
• the first electrode is electrically connected to the storage node through a plurality of contact plugs disposed vertically below the first electrode.