Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorKoji YAMAKAWA
Life of this patent
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Abstract
The semiconductor memory device includes: a first electrode and a second electrode disposed opposed to each other in a first direction; a resistance change film that is provided between the first electrode and the second electrode and contains at least one kind of element selected from germanium, antimony, and tellurium; and a first layer that is provided on a side surface of the resistance change film in a second direction intersecting the first direction and contains at least one kind of the element forming the resistance change film and at least one kind of element selected from nitrogen, carbon, boron, and oxygen.
Claims20
A semiconductor memory device comprising:
- a first electrode and a second electrode opposed to each other in a first direction;
- a resistance change film provided between the first electrode and the second electrode, the resistance change film containing at least one kind of element selected from germanium, antimony, and tellurium;
- and
- a first layer provided on a side surface of the resistance change film in a second direction intersecting the first direction, the first layer containing at least one kind of the element forming the resistance change film and at least one kind of element selected from nitrogen, carbon, boron, and oxygen.
A semiconductor memory device comprising:
- a first electrode and a second electrode opposed to each other in a first direction;
- a resistance change film provided between the first electrode and the second electrode, the resistance change film containing at least one kind of element selected from germanium, antimony, and tellurium;
- and
- a first layer provided on a surface of the resistance change film in contact with at least one of the first electrode and the second electrode, the first layer containing at least one kind of the element forming the resistance change film and at least one kind of element selected from nitrogen, carbon, boron, and oxygen.
A semiconductor memory device comprising:
- a first wiring layer extended in a first direction;
- a second wiring layer extended in a second direction intersecting the first direction;
- a third wiring layer extended in the second direction and adjacent to the second wiring layer in the first direction;
- a first resistance change film provided between the first wiring layer and the second wiring layer, the first resistance change film containing at least one kind of element selected from germanium, tellurium, and antimony;
- a second resistance change film provided between the first wiring layer and the third wiring layer, the second resistance change film containing at least one kind of element selected from germanium, tellurium, and antimony;
- a first layer provided on a side surface of the first resistance change film in the first direction, the first layer containing at least one kind of the element forming the first resistance change film and at least one kind of element selected from nitrogen, carbon, boron, and oxygen;
- and
- a second layer provided on a side surface of the second resistance change film between the first layer and the second resistance change film, the second layer containing at least one kind of the element forming the second resistance change film and at least one kind of element selected form nitrogen, carbon, boron, and oxygen.
Dependencies are inferred from the claim text.