Variable resistance memory devices

A variable resistance memory device comprising:

• a first electrode line layer;
• a second electrode line layer above the first electrode line layer;
• a first memory cell layer between the first electrode line layer and the second electrode line layer and comprising first memory cells;
• and
• an insulating layer comprising first air gaps that are on all side surfaces of the first memory cells,
• wherein each of the first memory cells comprises a selection device layer, an intermediate electrode layer, and a variable resistance layer.

A variable resistance memory device comprising:

• a first electrode line layer comprising first electrode lines extending in a first direction and spaced apart from each other on a substrate;
• a second electrode line layer above the first electrode line layer and comprising second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other;
• and
• a memory cell layer comprising memory cells between the first electrode line layer and the second electrode line layer in locations in which the first electrode lines and the second electrode lines overlap each other,
• wherein each of the memory cells comprises a selection device layer, an intermediate electrode layer, and a variable resistance layer,
• wherein an insulating layer comprising air gaps is arranged among the memory cells,
• wherein the memory cells are isolated from each other by the air gaps, and
• wherein, in the memory cells, a respective second width of each of the memory cells adjacent to the second electrode line layer is larger than a respective first width of each of the memory cells adjacent to the first electrode line layer.