Rram cells in crossbar array architecture

A method for forming vertical crossbar resistive random access memory (RRAM) cells, the method comprising:

• forming a plurality of dielectric pillars over a substrate;
• forming a dielectric layer over the plurality of dielectric pillars;
• etching the dielectric layer to form dielectric regions between the plurality of dielectric pillars;
• forming a bottom electrode;
• filling the bottom electrode with a first conductive material;
• capping the bottom electrode with a dielectric cap;
• removing the dielectric pillars to form recesses;
• depositing a high-k material;
• and
• forming a top electrode such that active areas of the RRAM cells are vertically aligned and the bottom electrode is shared between neighboring RRAM cells.

A semiconductor structure for forming vertical crossbar resistive random access memory (RRAM) cells, the semiconductor structure comprising:

• a substantially U-shaped bottom electrode disposed over a substrate;
• a conductive material disposed within the U-shaped bottom electrode;
• a dielectric cap disposed over the U-shaped bottom electrode;
• a high-k material disposed over the U-shaped bottom electrode and the dielectric cap;
• and
• a top electrode constructed such that active areas of the RRAM cells are vertically aligned.