Selection device and storage apparatus

A storage apparatus provided with a plurality of memory cells, each of the plurality of memory cells including a storage device and a selection device coupled to the storage device,

• the selection device comprising:
• a first electrode;
• a second electrode opposed to the first electrode;
• a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si);
• and
• a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.