US 2020/0052035 A1 · THREE DIMENSIONAL MEMORY ARRAYS

Abstract

The present disclosure includes three dimensional memory arrays. An embodiment includes a first plurality of conductive lines separated from one another by an insulation material, a second plurality of conductive lines arranged to extend substantially perpendicular to and pass through the first plurality of conductive lines and the insulation material, and a storage element material formed between the first and second plurality of conductive lines where the second plurality of conductive lines pass through the first plurality of conductive lines. The storage element material is between and in direct contact with a first portion of each respective one of the first plurality of conductive lines and a portion of a first one of the second plurality of conductive lines, and a second portion of each respective one of the first plurality of conductive lines and a portion of a second one of the second plurality of conductive lines.

Claims20

Dependent claims

A method of processing a three dimensional memory array, comprising:

forming a first conductive line material in a plurality of planes separated from one another by an insulation material;
forming a plurality of openings through the first conductive line material in the plurality of planes;
forming a storage element material in the plurality of openings such that:
the storage element material is in direct contact with a first portion of the first conductive line material on a first side of the plurality of openings in the plurality of planes;
and
the storage element material is in direct contact with a second portion of the first conductive line material on a second side of the plurality of openings in the plurality of planes;
and
forming a second conductive line material in the plurality of openings such that the second conductive line material is in direct contact with and between the storage element material in the plurality of openings in the plurality of planes.

5 more elements

A method of processing a three dimensional memory array, comprising:

forming a first conductive line material in a plurality of planes separated from one another by a first insulation material;
forming a plurality of openings through the first conductive line material in the plurality of planes;
forming a storage element material in the plurality of openings such that:
the storage element material is in direct contact with a first portion of the first conductive line material on a first side of the plurality of openings in the plurality of planes;
and
the storage element material is in direct contact with a second portion of the first conductive line material on a second side of the plurality of openings in the plurality of planes;
forming a second conductive line material in the plurality of openings such that the second conductive line material is in direct contact with and between the storage element material in the plurality of openings in the plurality of planes;
and
forming a second insulation material in the plurality of openings such that the second insulation material is in direct contact with and between the second conductive line material in the plurality of openings in the plurality of planes.

6 more elements

Dependencies are inferred from the claim text.

Three dimensional memory arrays

Life of this patent

Three dimensional memory arrays

Life of this patent

Abstract

Claims20