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AssigneeSpin Transfer Technologies, Inc.
InventorsBartlomiej Adam Kardasz, Wei Chen, Jorge Vasquez, Mustafa Pinarbasi
Estimating the term…
A magnetic memory element for using in magnetic random access memory. The magnetic memory element includes a novel exchange coupling layer for use in an antiferromagnetic structure for magnetically pinning a magnetic reference layer of the memory element. The exchange coupling layer is located between a first magnetic layer (reference layer) and a second magnetic layer (keeper layer). The exchange coupling layer includes a layer of Ru located between first and second layers of Ir. The Ir layers can be in contact with each of the first and second magnetic layers to provide an interfacial magnetic anisotropy, as well as providing RKKY exchange field. The Ru layer, provides an increased RKKY exchange field as a result of the high RKKY exchange coupling of Ru.
A memory element for use in a magnetic random access memory array, the memory element comprising:
A magnetic random access memory system, comprising:
Dependencies are inferred from the claim text.