Lens layers for semiconductor devices
AssigneeX-Fab Semiconductor Foundries AG
InventorDaniel Gäbler
Life of this patent
Estimating the term…
Abstract
A semiconductor device for light detection including a semiconductor layer having an optical active region for receiving incident light and a peripheral region around the optical active region. The device further includes a lens layer including a first lens for directing light into the optical active region, the first lens being located in a first region of the lens layer which overlaps a part but not the whole of the optical active region in the semiconductor layer.
Claims21
A semiconductor device for light detection comprising:
- a semiconductor layer having an optical active region for receiving incident light and a peripheral region around said optical active region;
- a lens layer comprising a first lens for directing light into said optical active region, said first lens being located in a first region of said lens layer which overlaps a part but not the whole of said optical active region in the semiconductor layer, and a second lens for directing light into said optical active region, wherein said second lens has a focal length different from a focal length of said first lens, and wherein said first and second lenses are concentric.
A semiconductor device for light detection comprising:
- a semiconductor layer having an optical active region for receiving incident light and a peripheral region around said optical active region;
- and
- a lens layer comprising a lens for directing light into said optical active region, said lens being located in a region of said lens layer which overlaps said peripheral region but not said optical active region.
A method of manufacturing a semiconductor device for light detection, the method comprising:
- providing a semiconductor layer having an optical active region for receiving incident light and a peripheral region around said optical active region;
- providing a lens layer on top of said semiconductor layer;
- forming a first lens for directing light into said optical active region in a first region of said lens layer which overlaps a part but not the whole of said optical active region in the semiconductor layer;
- and
- forming a second lens for directing light into said optical active region in said lens layer, wherein said second lens has a focal length different from a focal length of said first lens, and wherein said first and second lenses are concentric.
A method of manufacturing a semiconductor device for light detection, the method comprising:
- providing a semiconductor layer having an optical active region for receiving incident light and a peripheral region around said optical active region;
- providing a lens layer on top of said semiconductor layer;
- and
- forming a lens for directing light into said optical active region, said lens being located in a region of said lens layer which overlaps said peripheral region but not said optical active region.
Dependencies are inferred from the claim text.