Semiconductor device structure and manufacturing process thereof

A semiconductor device structure for sensing an incident light, comprising:

• a substrate having at least one light sensing region with a light sensing device formed therein;
• a passivation layer, disposed on the substrate, wherein a first side of the passivation layer comprises a plurality of microstructures covering the substrate and overlapped with the at least one light sensing region, and a second side of the passivation layer is a continuous flat plane, wherein the first side is opposite to the second side, and each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc;
• and
• a wiring structure, disposed on the substrate, wherein the writing structure comprises at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected, wherein the substrate is located between the passivation layer and the wiring structure.

A method for manufacturing a semiconductor device structure, comprising:

• providing a substrate having a device embedded therein;
• forming a wiring structure comprising at least one contact and metal interconnection patterns respectively formed in different dielectric layers on the substrate, wherein the at least one contact and the metal interconnection patterns are electrically connected;
• and
• forming a passivation layer having microstructures on the substrate, a first side of the passivation layer comprising the microstructures, a second side of the passivation layer being a continuous flat plane and opposite to the first side, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc, and the substrate is located between the passivation layer and the wiring structure.