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US 2020/0052024 A1Published application
Semiconductor sensors with charge dissipation layer and related methods
AssigneeSemiconductor Components Industries, LLC
InventorsRichard MAURITZSON, Bartosz Piotr BANACHOWICZ, Jon DALEY, Brian Anthony VAARTSTRA
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Abstract
Implementations of image sensors may include a passivation layer coupled over a silicon layer, a color-filter-array coupled over the passivation layer, a lens coupled over the color-filter-array, and at least two optically transmissive charge dissipation layers coupled over the silicon layer.
Claims20
An image sensor comprising:
- a passivation layer coupled over a silicon layer;
- a color-filter-array coupled over the passivation layer;
- a lens coupled over the color-filter-array;
- and
- at least two optically transmissive charge dissipation layers coupled over the silicon layer.
2 more elements
An image sensor comprising:
- an antireflective coating layer coupled over a silicon layer;
- a passivation layer coupled over the antireflective coating layer;
- a color-filter-array coupled over the passivation layer;
- a lens coupled over the color-filter-array;
- and
- one or more optically transmissive charge dissipation layers coupled between the passivation layer and the lens.
3 more elements
An image sensor comprising:
- a passivation layer coupled over a silicon layer;
- an optically transmissive charge dissipation layer coupled between the passivation layer and the silicon layer;
- a color-filter-array coupled over the passivation layer;
- and
- a lens coupled over the color-filter-array.
2 more elements
Dependencies are inferred from the claim text.