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US 2020/0052018 A1Published application
Infrared image sensor component manufacturing method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Ying WU, Li-Hsin CHU, Chung-Chuan TSENG, Chia-Wei LIU
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Abstract
A method includes epitaxially growing a first III-V compound layer over a semiconductive substrate. A second III-V compound layer is epitaxially grown over the first III-V compound layer. A source/drain contact is formed over the second III-V compound layer. A gate structure is formed over the second III-V compound layer. A pattern is formed shielding the gate structure and the source/drain contact, in which a portion of the second III-V compound layer is free from coverage by the pattern.
Claims20
A method, comprising:
- epitaxially growing a first III-V compound layer over a semiconductive substrate;
- epitaxially growing a second III-V compound layer over the first III-V compound layer;
- forming a source/drain contact over the second III-V compound layer;
- forming a gate structure over the second III-V compound layer;
- and
- forming a pattern shielding the gate structure and the source/drain contact, wherein a portion of the second III-V compound layer is free from coverage by the pattern.
3 more elements
A method, comprising:
- epitaxially growing a first III-V compound layer over a semiconductive substrate, wherein the first III-V compound layer has an energy gap in a gradient distribution;
- forming a source/drain contact over the first III-V compound layer;
- and
- forming a gate structure over the first III-V compound layer.
1 more element
A method, comprising:
- epitaxially growing a first III-V compound layer over a semiconductive substrate;
- forming a source/drain contact over the first III-V compound layer;
- after forming the source/drain contact, forming a gate structure over the first III-V compound layer;
- and
- forming a pattern shielding the gate structure and the source/drain contact, wherein a portion of the first III-V compound layer is free from coverage by the pattern.
2 more elements
Dependencies are inferred from the claim text.