Detection substrate, ray imaging device and method for driving detection substrate

A detection substrate comprising:

• a base substrate comprising a sensing region and an auxiliary region;
• a plurality of sensing thin film transistors arranged in a matrix in the sensing region to form a plurality of sensing thin film transistor rows and a plurality of sensing thin film transistor columns;
• a plurality of signal read lines and a plurality of gate lines in the sensing region, wherein the plurality of signal read lines cross the plurality of gate lines, respectively, first electrodes of the sensing thin film transistors in each of the sensing thin film transistor columns are electrically connected to the same signal read line, and gate electrodes of the sensing thin film transistors in each of the sensing thin film transistor rows are electrically connected to the same gate line;
• a compensation thin film transistor row in the auxiliary region, the compensation thin film transistor row comprising a plurality of compensation thin film transistors, wherein the plurality of compensation thin film transistors are in one-to-one correspondence with the plurality of sensing thin film transistor columns, and a first electrode of each of the compensation thin film transistors is electrically connected to the same signal read line as the first electrodes of the sensing thin film transistors in the corresponding sensing thin film transistor column;
• and
• a compensation gate line electrically connected to a gate electrode of each of the compensation thin film transistors,
• wherein, as for the sensing thin film transistors and the compensation thin film transistor electrically connected to the same signal read line, both the first electrodes of the sensing thin film transistors and the first electrode of the compensation thin film transistor are source electrodes or both the first electrodes of the sensing thin film transistors and the first electrode of the compensation thin film transistor are drain electrodes, source-drain directions of the sensing thin film transistors are consistent with one another, and a source-drain direction of the compensation thin film transistor is opposite to each of the source-drain directions of the sensing thin film transistors.