Pixel structure and electric device
AssigneeHimax Imaging Limited
InventorsYang WU, Fei-Xia YU, Yu Hin Desmond CHEUNG
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Abstract
A pixel structure of an image sensor is provided and includes following units. A crystalline layer of a first doping type is formed on a substrate. A photodiode region is formed in the crystalline layer. A gate of a source follower transistor is formed on a top surface of the crystalline layer. A reset gate is formed on the top surface of the crystalline layer. A doped region of a second doping type is formed in the crystalline layer and formed between the reset gate and the gate of the source follower. The first doping type is different from the second doping type, and the photodiode region is connected to the doped region under the top surface of the crystalline layer as an anti-blooming path.
Claims20
A pixel structure, comprising:
- a substrate;
- a crystalline layer of a first doping type formed on the substrate;
- a photodiode region formed in the crystalline layer;
- a gate of a source follower transistor formed on a top surface of the crystalline layer;
- a reset gate formed on the top surface of the crystalline layer;
- and
- a doped region of a second doping type formed in the crystalline layer and formed between the reset gate and the gate of the source follower, wherein no gate portion of the pixel structure is formed directly above the doped region,
- wherein the first doping type is different from the second doping type, and the photodiode region is connected to the doped region under the top surface of the crystalline layer as an anti-blooming path.
An electrical device comprising:
- a pixel structure comprising:
- a substrate;
- a crystalline layer of a first doping type formed on the substrate;
- a photodiode region formed in the crystalline layer;
- a gate of a source follower transistor formed on a top surface of the crystalline layer;
- a reset gate formed on the top surface of the crystalline layer;
- and
- a doped region of a second doping type formed in the crystalline layer and formed between the reset gate and the gate of the source follower, wherein no gate portion of the pixel structure is formed directly above the doped region,
- wherein the first doping type is different from the second doping type, and the photodiode region is connected to the doped region under the top surface of the crystalline layer as an anti-blooming path.
Dependencies are inferred from the claim text.