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US 2020/0051997 A1Published application
Semiconductor device and manufacturing method of a semiconductor device
AssigneeSK hynix Inc.
InventorIn Su PARK
Life of this patent
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Abstract
A semiconductor device includes a stack structure, a channel layer passing through the stack structure, a memory layer enclosing the channel layer and including first and second openings which expose the channel layer, a well plate coupled to the channel layer through the first opening, and a source plate coupled to the channel layer through the second opening.
Claims16
A semiconductor device, comprising:
- a stack structure;
- a channel layer passing through the stack structure;
- a memory layer enclosing the channel layer and including first and second openings which expose the channel layer;
- a well plate coupled to the channel layer through the first opening;
- and
- a source plate coupled to the channel layer through the second opening.
3 more elements
A semiconductor device, comprising:
- a base including a well region doped with an impurity;
- a well plate on the base;
- a source plate on the well plate;
- an insulating layer interposed between the well plate and the source plate, wherein the insulating layer electrically insulates the well plate from the source plate;
- a stack structure disposed above the source plate, wherein the stack structure comprises conductive layers and insulating layers alternately stacked with each other;
- a source connection structure passing through the stack structure, wherein the source connection structure is electrically coupled to the source plate and electrically insulated from the conductive layers and the well plate;
- and
- a well connection structure electrically coupled to the well plate and electrically insulated from the source plate and the conductive layers, wherein the well connection structure extends through the conductive layers and through the well plate into the well region.
5 more elements
Dependencies are inferred from the claim text.