Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
AssigneeSanDisk Technologies LLC
InventorsPeter RABKIN, Raghuveer S. MAKALA, Masaaki HIGASHITANI
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Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing molybdenum portions located over a substrate, memory stack structures extending through the alternating stack, and including a memory film and a vertical semiconductor channel, and a backside blocking dielectric layer of a dielectric oxide material including aluminum atoms and at least one of lanthanum or zirconium atoms which directly contacts the molybdenum portions.
Claims20
A three-dimensional memory device comprising:
- an alternating stack of insulating layers and electrically conductive layers located over a substrate, wherein the electrically conductive layers comprise molybdenum portions;
- memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel;
- and
- a backside blocking dielectric layer comprising a dielectric oxide material including aluminum atoms and at least one of lanthanum or zirconium atoms, wherein the backside blocking dielectric layer is located between the electrically conductive layers and the memory stack structures and directly contacts the molybdenum portions.
A method of forming a three-dimensional memory device, comprising:
- forming an alternating stack of insulating layers and spacer material layers over a substrate;
- forming memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel;
- forming backside recesses by removing the sacrificial material layers selective to the insulating layers and the memory stack structures;
- forming a backside blocking dielectric layer comprising a dielectric oxide material including aluminum atoms and at least one of lanthanum or zirconium atoms directly on surfaces of the insulating layers and the memory stack structures in the backside recesses;
- and
- forming electrically conductive layers including molybdenum portions by depositing the molybdenum portions directly on surfaces of the backside blocking dielectric layer in remaining volumes of the backside recesses.
Dependencies are inferred from the claim text.