Memory Device and Forming Method Thereof

A method for forming a memory device, comprising:

• forming a first layer stack over a substrate, the first layer stack having alternating sacrificial and dielectric layers;
• forming a capping dielectric layer over the first layer stack;
• forming one or more first openings through the capping dielectric layer and through the first layer stack;
• forming one or more first conductive contacts in the one or more first openings;
• forming a second layer stack over the capping dielectric layer, the second layer stack having alternating sacrificial and dielectric layers;
• forming one or more second openings through the second layer stack and aligned with the one or more first conductive contacts;
• and
• forming one or more second conductive contacts in the one or more second openings, such that an ohmic contact is formed between the one or more first conductive contacts and the one or more second conductive contacts, wherein each of the one or more second conductive contacts aligned over the one or more first conductive contacts is an array common source contact.