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AssigneeSunrise Memory Corporation
InventorsEli Harari, Raul Adrian Cernea, George Samachisa, Wu-Yi Henry Chien
Estimating the term…
A thin-film storage transistor includes (a) first and second polysilicon layers of a first conductivity serving, respectively, as a source terminal and a drain terminal of the thin-film storage transistor; (b) a third polysilicon layer of a second conductivity adjacent the first and second polysilicon layers, serving as a channel region of the thin-film storage transistor; (c) a conductor serving as a gate terminal of the thin-film storage transistor; and (d) a charge-trapping region between the conductor and third polysilicon layer, wherein a fourth body layer polysilicon of the second conductivity is included to provide an alternative source of free charge careers to accelerate device operation.
A thin-film storage transistor in a memory string, comprising:
A thin-film storage transistor having a source terminal, a drain terminal, a gate terminal, a charge-trapping region and a channel region having a thickness such as to be depleted when a voltage difference between the gate terminal and the drain terminal is negative, wherein an erase operation is performed on the thin-film storage transistor setting (i) a first voltage on the gate terminal, (ii) a second voltage on both the source and drain terminals, wherein the second voltage is greater than the first voltage sufficiently such that excess acceptor carriers are generated at a drain/channel junction and swept into the channel region via a gate-induced drain leakage current, the excess acceptor carriers drawing electrons from the charge-trapping region to accomplish the erase operation.
Dependencies are inferred from the claim text.