Antifuse Array and Method of Forming Antifuse Using Anodic Oxidation
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsJenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
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Abstract
A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
Claims20
A method comprising:
- patterning a first protrusion over a substrate;
- performing one or more iterations of anodic oxidation and etching on the first protrusion, wherein after the performing the one or more iterations of anodic oxidation and etching, the first protrusion comprises a first dielectric material surrounding a nanowire, the first dielectric material comprising a tapered recess at a top surface thereof, wherein a depth of the tapered recess measured in a first direction is greater at a center of the first dielectric material than a depth of the tapered recess measured in the first direction at edges of the first dielectric material;
- and
- forming a gate over the tapered recess, wherein the first dielectric material comprises an antifuse extending between the nanowire and the gate.
A method comprising:
- forming a protrusion on a substrate;
- forming a first dielectric material surrounding a nanowire in the protrusion, wherein the forming the first dielectric material comprises oxidizing the protrusion;
- etching the first dielectric material to expose the nanowire;
- depositing a conductive layer over the first dielectric material, wherein the conductive layer extends to make contact with the nanowire;
- and
- etching the conductive layer to form a program line, wherein the first dielectric material comprises an antifuse interposed between the program line and the nanowire.
A method comprising:
- patterning a protrusion over a substrate;
- anodically oxidizing the protrusion to form a select line surrounded by a dielectric material, the dielectric material comprising an antifuse disposed over the select line in a direction perpendicular to a major surface of the substrate;
- etching the dielectric material to expose at least a portion of the select line;
- and
- depositing a conductive material over the dielectric material, the conductive material being electrically coupled to the select line.
Dependencies are inferred from the claim text.