Anti-fuse, method for fabricating anti-fuse, and storage apparatus thereof

A method for fabricating an anti-fuse, comprising:

• machining a substrate on a base by a front-end-of-line device machining process, and forming a first electrode, a first doped region, a gate electrode, and a second doped region on the substrate, wherein the first doped region, the second doped region, and the gate electrode form a field-effect transistor, and the first electrode and the substrate form the anti-fuse;
• and
• electrically connecting the first doped region to the first electrode by a back-end-of-line metal machining process.

A storage apparatus, comprising a plurality of anti-fuse units arranged in rows and columns to form an anti-fuse array, wherein the anti-fuse unit comprises:

• a field-effect transistor comprising a substrate, a first doped region, a second doped region, and a gate electrode, wherein the first doped region, the second doped region, and the gate electrode are disposed on the substrate;
• and
• a first electrode arranged on the substrate and forming an anti-fuse capacitor with the substrate, wherein the first electrode is connected to the first doped region, and configured to break down the anti-fuse capacitor by voltage adjustment between the second doped region and the substrate and write data to the anti-fuse unit, or is configured to detect a current flowing through the second doped region by voltage adjustment for the gate electrode and determine whether data is written to the anti-fuse unit.