Ic including standard cells and sram cells
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy LIAW
Life of this patent
Estimating the term…
Abstract
An IC is provided. The IC includes a plurality of first cells arranged in a column of a first array, and a plurality of second cells arranged in a column of a second array. P-type fin field-effect transistors of the plurality of first cells share a first semiconductor fin including silicon germanium. P-type FinFETs of two adjacent second cells share a second semiconductor fin including Si. The first array is separated from the second array. A length of the second semiconductor fin is shorter than a length of the first semiconductor fin.
Claims20
An integrated circuit (IC), comprising:
- a plurality of first cells arranged in a column of a first array, wherein P-type fin field-effect transistors of the plurality of first cells share a first semiconductor fin comprising silicon germanium;
- and
- a plurality of second cells arranged in a column of a second array, wherein P-type FinFETs of two adjacent second cells share a second semiconductor fin comprising Si,
- wherein the first array is separated from the second array,
- wherein a length of the second semiconductor fin is shorter than a length of the first semiconductor fin.
An integrated circuit (IC), comprising:
- a plurality of first cells arranged in a column of a first array, wherein P-type fin field-effect transistors (FinFETs) of the plurality of first cells share a first semiconductor fin comprising a first material, and N-type FinFETs of the plurality of first cells share a second semiconductor fin comprising a second material that is different from the first material;
- and
- a plurality of second cells arranged in a column of a second array, wherein P-type FinFETs of two adjacent second cells share a third semiconductor fin comprising a third material different from the first material, and N-type FinFETs of the plurality of second cells share a fourth semiconductor fin comprising the second material,
- wherein the first material comprises silicon germanium (SiGe),
- wherein the first array is separated from the second array,
- wherein lengths of the first, second and fourth semiconductor fins are longer than a length of the third semiconductor fin.
An integrated circuit (IC), comprising:
- a plurality of P-type fin field-effect transistors (FinFETs), comprising:
- at least one first P-type FinFET disposed in a first cell, comprising a silicon germanium (SiGe) channel region;
- and
- at least one second P-type FinFET disposed in a second cell, comprising a Si channel region, wherein source and drain regions of the plurality of P-type FinFETs comprise SiGe and a p-type impurity,
- wherein the first cell is separated from the second cell.
Dependencies are inferred from the claim text.