Semiconductor device and method for fabricating the same
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsYu-Shan Su, Chia-Wei Wu, Ting-Pang Chung
Life of this patent
Estimating the term…
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a periphery region; forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench; forming a first liner, a second liner, and a third liner in the first trench and the second trench; performing a surface treatment process to lower stress of the third liner; and planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.
Claims11
A method for fabricating semiconductor device, comprising:
- providing a substrate having a memory region and a periphery region;
- forming a first trench and a second trench in substrate on the memory region, wherein a width of the second trench is greater than a width of the first trench;
- forming a first liner, a second liner, and a third liner in the first trench and the second trench;
- performing a surface treatment process to lower stress of the third liner;
- and
- planarizing the third liner, the second liner, and the first liner to form a first isolation structure and a second isolation structure.
Dependencies are inferred from the claim text.