Semiconductor devices

A semiconductor device comprising:

• a substrate including a first region and a second region;
• a fin-type active area extending lengthwise in a first direction and protruding from the substrate in each of the first region and the second region;
• a plurality of nanosheet stacked structures extending in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region;
• a blocking film covering a part of an upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures, in the first region;
• a plurality of gate electrodes overlapping with at least a portion of each of the plurality of nanosheet stacked structures on the fin-type active area and extending lengthwise in a second direction intersecting the first direction;
• and
• a plurality of residual semiconductor patterns in a space between the fin-type active area and the plurality of nanosheets of the pair of nanosheet stacked structures covered by the blocking film among the plurality of nanosheet stacked structures,
• wherein a portion of the plurality of gate electrodes, which extends on the nanosheet stacked structures not covered by the blocking film, fills a space between the plurality of nanosheets and the fin-type active area.

A semiconductor device comprising:

• a substrate including a first region and a second region;
• a fin-type active area extending lengthwise in a first direction and protruding from the substrate in each of the first region and the second region;
• a plurality of nanosheet stacked structures extending lengthwise in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region;
• a first source/drain region and a second source/drain region which are disposed in the first region and the second region between the plurality of nanosheet stacked structures to be connected to the plurality of nanosheets and are made of different materials from each other;
• a first blocking film covering a part of an upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures, in the first region;
• a plurality of gate electrodes overlapping with at least a portion of each of the plurality of nanosheet stacked structures on the fin-type active area and extending in a second direction intersecting the first direction;
• and
• a gate dielectric layer between the plurality of gate electrodes and the plurality of nanosheets,
• wherein the plurality of nanosheets included in each of the pair of nanosheet stacked structures covered by the first blocking film are spaced apart from a gate dielectric film with the first blocking film therebetween, and
• wherein the plurality of nanosheets included in a remainder of the plurality of nanosheets stacked structures are in contact with the gate dielectric layer.