Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy LIAW
Life of this patent
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Abstract
A semiconductor device includes a first fin, a first gate electrode, a second fin, a second gate electrode, and a first dielectric capping layer. The first fin extends along a direction. The first gate electrode is across the first fin and has a first notched corner. The second fin extends along the direction. The second gate electrode is across the second fin and has a second notched corner. The first dielectric capping layer has a first portion in between the first notched corner and the second notched corner.
Claims21
A semiconductor device, comprising:
- a first fin extending along a direction;
- a first gate electrode across the first fin and having a first notched corner;
- a second fin extending along the direction;
- a second gate electrode across the second fin and having a second notched corner;
- and
- a first dielectric capping layer comprising a first portion in between the first notched corner and the second notched corner.
A semiconductor device, comprising:
- a first fin extending along a direction;
- a second fin extending along the direction;
- a gate electrode crossing the first and second fins and having a first end portion and a second end portion opposite to the first end portion, wherein the first end portion and second end portion have a notched profile;
- and
- a first dielectric layer in contact with the first and second end portions of the gate electrode.
19-20. (canceled)
A semiconductor device, comprising:
- a substrate;
- a gate structure over the substrate and including:
- a gate dielectric;
- and
- a gate electrode over the gate dielectric, wherein the gate electrode includes a top portion that
- has a notched corner;
- and
- first and second source/drains on opposite sides of the gate structure, respectively.
Dependencies are inferred from the claim text.