Integrated circuit including multiple-height cell and method of manufacturing the integrated circuit
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-young Lim, Jae-ho Park, Sang-hoon Baek, Hyeon-gyu You, Dal-hee Lee
Life of this patent
Estimating the term…
Abstract
Provided is an integrated circuit including: at least one active region extending in a first row in a first direction; at least one active region extending in a second row in the first direction; and a multiple height cell including the at least one active region in the first row, the at least one active region in the second row, at least one gate line extending in a second direction crossing the first direction, wherein each of the at least one active region in the first row and the at least one active region in the second row is terminated by a diffusion break.
Claims25
An integrated circuit comprising:
- at least one active region extending in a first row in a first direction;
- at least one active region extending in a second row in the first direction;
- and
- a multiple height cell comprising the at least one active region in the first row, the at least one active region in the second row, and at least one gate line extending in a second direction crossing the first direction,
- wherein each of the at least one active region in the first row and the at least one active region in the second row is terminated by a diffusion break.
(canceled)
(canceled)
An integrated circuit comprising:
- a multiple height cell comprising a plurality of active regions in two or more rows and extending in a first direction,
- wherein the multiple height cell comprises:
- the plurality of active regions extending in the first direction and being terminated by a diffusion break;
- at least one gate line extending in a second direction crossing the first direction;
- and
- a plurality of transistor groups that are connected in parallel with each other and configured to commonly receive an input signal,
- wherein each of at least two transistor groups from among the plurality of transistor groups includes transistors that share one gate line.
21-24. (canceled)
An integrated circuit comprising:
- a multiple height cell comprising a plurality of active regions in two or more rows and extending in a first direction,
- wherein the multiple height cell comprises:
- the plurality of active regions extending in the first direction;
- and
- at least one gate line extending in a second direction crossing the first direction,
- wherein each of the plurality of active regions is terminated by a diffusion break.
(canceled)
28-30. (canceled)
Dependencies are inferred from the claim text.