High voltage integration for hkmg technology

A method of forming an integrated circuit (IC), comprising:

• providing a substrate having a low voltage region and a high voltage region defined on the substrate;
• forming and patterning a high voltage gate dielectric component on the substrate within the high voltage region and a low voltage gate dielectric component on the substrate within the low voltage region;
• forming a low voltage gate electrode on the low voltage gate dielectric component;
• forming a first interlayer dielectric layer overlying the low voltage gate electrode in the low voltage region and the high voltage gate dielectric component in the high voltage region;
• and
• forming a high voltage gate electrode overlying the first interlayer dielectric layer in the high voltage region.

A method of forming an integrated circuit (IC), comprising:

• providing a substrate having a low voltage region, a medium voltage region, and a high voltage region defined on the substrate;
• forming and patterning a high voltage gate dielectric component on the substrate in the high voltage region, a medium voltage gate dielectric component on the substrate in the medium voltage region, and a low voltage gate dielectric component on the substrate in the low voltage region;
• forming a first polysilicon layer on the high voltage gate dielectric component in the high voltage region, on the medium voltage gate dielectric component in the medium voltage region, and on the low voltage gate dielectric component in the low voltage region;
• forming a second polysilicon layer on the first polysilicon layer within the low voltage region;
• patterning the second polysilicon layer and the first polysilicon layer to form a low voltage gate electrode in the low voltage region, to form a medium voltage gate electrode in the medium voltage region, and to expose the high voltage gate dielectric component on the substrate in the high voltage region;
• and
• forming a first interlayer dielectric layer overlying the low voltage gate electrode, the medium voltage gate electrode, and the high voltage gate dielectric component.