Method for Producing an Optoelectronic Component and Optoelectronic Component

A method for producing an optoelectronic component, the method comprising:

• providing a semiconductor layer sequence comprising a plurality of pixels and an active layer, wherein the active layer is configured to emit a primary radiation in a blue region of an electromagnetic spectrum with a peak wavelength of between 420 nm inclusive and 480 nm inclusive;
• applying a first photoresist and a first converter material on the semiconductor layer sequence;
• exposing the first photoresist with radiation having the peak wavelength longer than the peak wavelength of the primary radiation;
• curing the first photoresist by polymerization in order to form a first converter layer comprising a matrix material and the first converter material;
• and
• structuring the first converter layer.

An optoelectronic component comprising:

• a semiconductor layer sequence comprising a plurality of pixels having an edge length between 4500 nm inclusive and 5500 nm inclusive, and an active layer configured to emit primary radiation in a blue region of an electromagnetic spectrum,
• wherein either exactly one converter layer selected from a first converter layer or a second converter layer or no converter layer is disposed over each pixel,
• wherein the first converter layer comprises a matrix material and a first converter material configured to convert the primary radiation into a secondary radiation in a green region of the electromagnetic spectrum, and
• wherein the second converter layer comprises a matrix material and a second converter material configured to convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum.

An optoelectronic component comprising

• a semiconductor layer sequence comprising a plurality of pixels having an edge length between 4500 nm inclusive and 5500 nm inclusive, and an active layer configured to emit primary radiation in a blue region of an electromagnetic spectrum,
• wherein either exactly one converter layer selected from a first converter layer or a second converter layer or no converter layer is disposed over each pixel,
• wherein the first converter layer comprises a matrix material and a first converter material configured to convert the primary radiation into a secondary radiation in a green region of the electromagnetic spectrum,
• wherein the second converter layer comprises a matrix material and a second converter material configured to convert the primary radiation into a secondary radiation in a red region of the electromagnetic spectrum, and
• wherein the matrix material is a polymerized photoresist.