Semiconductor device and method of manufacturing same
AssigneeToshiba Memory Corporation
InventorYuichi SANO
Life of this patent
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Abstract
A semiconductor device includes a substrate, a first semiconductor chip on the substrate, a first adhesive material on the first semiconductor chip, a spacer chip on the first adhesive material, a second adhesive material on the spacer chip, a second semiconductor chip on the second adhesive material, and a resin material that covers the first and second semiconductor chips and the spacer chip. The spacer chip has a first region with which the resin material comes in contact is roughened and a second region that is different from the first region.
Claims20
A semiconductor device comprising:
- a substrate;
- a first semiconductor chip on the substrate;
- a first adhesive material on the first semiconductor chip;
- a spacer chip on the first adhesive material;
- a second adhesive material on the spacer chip;
- a second semiconductor chip on the second adhesive material;
- and
- a resin material that covers the first and second semiconductor chips and the spacer chip, wherein
- the spacer chip has a first region with which the resin material comes in contact is roughened and a second region that is different from the first region.
A method of manufacturing a semiconductor device comprising:
- placing a first semiconductor chip on a substrate;
- providing a spacer chip above the first semiconductor chip;
- irradiating a first region of the spacer chip with laser light to roughen the first region, the spacer chip including a second region different from the first region;
- placing a second semiconductor chip above the spacer chip;
- and
- covering the first and second semiconductor chips and the spacer chip with a resin material, wherein
- the resin material contacts at least the first region of the spacer chip.
Dependencies are inferred from the claim text.