Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsXin-Hua Huang, Kuan-Liang Liu, Kuo Liang Lu, Ping-Yin Liu
Estimating the term…
An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.
A workpiece bonding apparatus for controlling a propagation of a bond wave between a first workpiece and a second workpiece, the workpiece bonding apparatus comprising:
A method for controlling a propagation of a bond wave concurrent with a bonding of a first workpiece to a second workpiece, the method comprising:
A workpiece bonding system for controlling a propagation of a bond wave between a first workpiece and a second workpiece, the system comprising:
Dependencies are inferred from the claim text.