Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a low-density substrate comprising:
• a first dielectric material;
• a plurality of low density conductive vias extending generally vertically through the first dielectric material;
• and
• a cavity in the first dielectric material;
• a high-density patch positioned inside the cavity in the first dielectric material, wherein the first dielectric material contacts and laterally surrounds the high-density patch;
• a first semiconductor die comprising high-density bumps and low-density bumps;
• and
• a second semiconductor die comprising high-density bumps and low-density bumps,
• wherein the high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch, and the low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

A semiconductor device comprising:

• a low-density substrate comprising:
• a first dielectric material;
• a plurality of low density conductive vias extending generally vertically through the first dielectric material;
• and
• a cavity in the first dielectric material, where the cavity extends completely through the first dielectric material;
• a high-density patch positioned inside the cavity in the first dielectric material;
• a first semiconductor die comprising high-density bumps and low-density bumps;
• and
• a second semiconductor die comprising high-density bumps and low-density bumps,
• wherein the high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch, and the low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.

A method of manufacturing a semiconductor device, the method comprising:

• providing a first structure comprising:
• a low-density substrate comprising:
• a first dielectric material;
• a plurality of low density conductive vias extending generally vertically through the first dielectric material;
• and
• a cavity in the first dielectric material;
• and
• a high-density patch positioned inside the cavity in the first dielectric material, wherein the first dielectric material contacts and laterally surrounds the high-density patch;
• providing a first semiconductor die comprising high-density bumps and low-density bumps;
• providing a second semiconductor die comprising high-density bumps and low-density bumps;
• electrically connecting the high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die to the high-density patch;
• and
• electrically connecting the low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die to the low-density substrate.