Advanced crack stop structure
AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Baozhen Li, Xiao Hu Liu, Griselda Bonilla
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AssigneeInternational Business Machines Corporation
InventorsChih-Chao Yang, Baozhen Li, Xiao Hu Liu, Griselda Bonilla
Estimating the term…
A method for constructing an advanced crack stop structure is described. An interconnection structure is formed comprised of a plurality of levels. Each level has an interconnect structure section and a crack stop section. In a first level of the interconnection structure, a high modulus layer is formed in the crack stop recess but not the interconnect recess and a barrier layer and a conductive metal layer is formed in both the interconnection recess and the crack stop recess of the first level. In a second level of the interconnection structure and the crack stop structure, a second high modulus layer is formed in the crack stop recess but not the interconnect recess and a barrier layer and a conductive metal layer is formed in both the interconnection recess and the crack stop recess of the second level. The barrier layers and high modulus layers are deposited in different steps.
A method for creating an integrated circuit (IC) structure comprising:
The method as recited in claim 10, wherein the high modulus layer in the first level has a void.
A method for creating an integrated circuit (IC) structure comprising:
Dependencies are inferred from the claim text.