US 2020/0051922 A1 · MEMORY DEVICE

Abstract

A memory device includes an insulation layer, an interconnection structure disposed in the insulation layer, a dielectric layer disposed on the insulation layer and the interconnection structure, a connection hole disposed on the interconnection structure and penetrates the dielectric layer, an alignment mark trench penetrating the dielectric layer on a peripheral region, a first patterned conductive layer, and a patterned memory material layer. The first patterned conductive layer includes a connection structure at least partly disposed in the connection hole and a first pattern disposed in the alignment mark trench. The patterned memory material layer includes a first memory material pattern disposed on the connection structure and a second memory material pattern disposed in the alignment mark trench. Manufacturing yield and alignment condition of forming the memory device may be improved by disposing a part of the first patterned conductive layer in the alignment mark trench.

Claims21

Dependent claims

A memory device, comprising:
an insulation layer, wherein a memory cell region and a peripheral region are defined on the insulation layer;
an interconnection structure disposed in the insulation layer;
a dielectric layer disposed on the insulation layer and the interconnection structure, wherein the dielectric layer is disposed on the memory cell region and the peripheral region;
a connection hole disposed on the interconnection structure and penetrating the dielectric layer on the memory cell region;
an alignment mark trench penetrating the dielectric layer on the peripheral region;
a first patterned conductive layer disposed on the insulation layer, the first patterned conductive layer comprising:
a connection structure at least partly disposed in the connection hole;
and
a first pattern disposed in the alignment mark trench;
and
a patterned memory material layer disposed on the insulation layer, the patterned memory material layer comprising:
a first memory material pattern disposed on the connection structure;
and
a second memory material pattern disposed in the alignment mark trench.

12 more elements

Dependencies are inferred from the claim text.

Memory device

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Memory device

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Abstract

Claims21