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US 2020/0051921 A1Published application
Integrated circuit devices including a boron-containing insulating pattern
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-kak Lee, Yoon-ho Son, Mong-sup Lee, Wook-yeol Yi
Life of this patent
Estimating the term…
Abstract
Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.
Claims23
An integrated circuit device comprising:
- a substrate comprising a first active region and a second active region that are spaced apart from each other;
- a bit line that extends in a horizontal direction on the substrate;
- a direct contact connected between the first active region and the bit line;
- a contact plug that extends in a vertical direction on the substrate, the contact plug comprising an upper portion adjacent the bit line and a lower portion in contact with the second active region in the substrate;
- and
- a boron-containing insulating pattern between the lower portion of the contact plug and the direct contact.
3 more elements
(canceled)
An integrated circuit device comprising:
- a substrate comprising a plurality of active regions spaced apart from each other;
- a bit line extending in a horizontal direction on the substrate;
- a plurality of contact plugs spaced apart from each other along a horizontal line parallel to the bit line on the substrate;
- a plurality of insulating fences that alternate with the plurality of contact plugs in the horizontal direction;
- a direct contact connected between a first active region of the plurality of active regions and the bit line;
- and
- a boron-containing insulating pattern between a first contact plug of the plurality of contact plugs and the direct contact.
4 more elements
-20. (canceled)
An integrated circuit device comprising:
- a substrate comprising a plurality of active regions;
- a bit line extending in a horizontal direction on the substrate;
- a direct contact connected between a first active region of the plurality of active regions and the bit line;
- a first contact plug and a second contact plug that face each other with the bit line therebetween, wherein the first contact plug and the second contact plug are connected to a second active region and a third active region, respectively, of the plurality of active regions;
- a first insulating fence and a second insulating fence that face each other with the bit line therebetween;
- and
- a plurality of boron-containing insulating patterns comprising a first boron-containing insulating pattern between the direct contact and the first contact plug and a second boron-containing insulating pattern between the direct contact and the second contact plug,
- wherein each of the plurality of boron-containing insulating patterns comprises a silicon boron nitride (SiBN) film.
5 more elements
(canceled)
Dependencies are inferred from the claim text.