Graphene Diffusion Barrier
AssigneeApplied Materials, Inc.
InventorsYong Wu, Srinivas Gandikota, Abhijit Basu Mallick, Srinivas D. Nemani
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Abstract
A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.
Claims20
A method of forming an electronic device, the method comprising:
- forming a graphene barrier layer on a substrate surface;
- and
- depositing a fill layer over the graphene barrier layer,
- wherein the graphene barrier layer prevents diffusion of at least one element between the fill layer and the substrate surface.
A method of forming an electronic device, the method comprising:
- forming a graphene barrier layer on a substrate surface comprising Al2O3, the graphene barrier layer having a thickness in a range of about 15 Å to about 100 Å;
- forming an amorphous silicon layer on the graphene barrier layer;
- and
- exposing the amorphous silicon layer to a tungsten precursor to form a tungsten layer by atomic substitution, the tungsten precursor comprising WF6,
- wherein the graphene barrier layer prevents diffusion of fluorine into the substrate surface.
An electronic device comprising a graphene barrier layer between a first material and a second material, wherein the graphene barrier layer prevents diffusion of at least one element between the first material and the second material.
Dependencies are inferred from the claim text.