Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy LIAW
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a metal layer, a dielectric layer, and a via. The metal layer is disposed above the semiconductor substrate. The dielectric layer is disposed between the metal layer and the semiconductor substrate. The via is embedded in the dielectric layer and comprises a first portion and a second portion between the first portion and the semiconductor substrate. The first portion of the via has a first width. The second portion of the via has a second width greater than the first width of the first portion.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a metal layer above the semiconductor substrate;
- a dielectric layer between the metal layer and the semiconductor substrate;
- a source via embedded in the dielectric layer and comprising a first portion and a second portion between the first portion and the semiconductor substrate, wherein the first portion has a first width, and the second portion has a second width greater than the first width;
- and
- a drain via embedded in the dielectric layer, wherein an area of a top surface of the source via is greater than an area of a top surface of the drain via.
A semiconductor device, comprising:
- a semiconductor substrate;
- a semiconductor fin extending above the semiconductor substrate and along a first direction;
- a gate structure extending across the semiconductor fin and along a second direction different from the first direction;
- a first dielectric layer overlying the semiconductor substrate;
- a second dielectric layer between the first dielectric layer and the semiconductor substrate;
- and
- a source via extending through the first and second dielectric layers and in contact with a bottom surface and a sidewall of the first dielectric layer, wherein a length of a top surface of the source via measured in the first direction is greater than a width of the top surface of the source via measured in the second direction.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first dielectric layer over a source/drain contact;
- forming a second dielectric layer over the first dielectric layer;
- forming a third dielectric layer over the second dielectric layer;
- etching the third dielectric layer to form a first via hole that extends through the third dielectric layer;
- etching the second dielectric layer to form a second via hole that extends through the second dielectric layer, wherein the second via hole is wider than the first via hole;
- after etching the second dielectric layer to form the second via hole, etching the first dielectric layer to form a third via hole that exposes the source/drain contact;
- and
- filling the first, second, and third via holes with a conductive material.
Dependencies are inferred from the claim text.