Apparatuses and methods for tsv resistance and short measurement in a stacked device
AssigneeMicron Technology, Inc.
InventorNaohisa Nishioka
Life of this patent
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Abstract
Examples described herein include apparatuses and methods TSV resistance and short measurement in a stacked device. An example apparatus may include a chip comprising semiconductor substrate including a first surface and a second surface opposite to the first surface. The chip may include a first terminal formed above the first surface, a second terminal formed above the second surface, a buffer circuit coupled between the first and second terminals, a first through-substrate via (TSV) penetrating the semiconductor substrate, and a first switch coupled between the first terminal and the first TSV.
Claims20
A method comprising:
- providing a force signal from a force signal driver circuit to a first terminal of a first chip of a stacked semiconductor device via a first switch on the first chip;
- coupling a sense circuit to the first terminal via a second switch on the first chip to provide a sense signal;
- coupling the sense circuit to a second terminal on a second chip of the stacked semiconductor device to provide a sense feedback signal;
- sensing impedance between the first terminal and the second terminal based on the sense signal and the sense feedback signal.
A method comprising:
- providing a force signal from a force signal driver circuit to a first terminal of a first chip of a stacked semiconductor device via a first switch on the first chip;
- coupling a second terminal of the first chip to a low supply voltage source via a second switch, wherein a voltage of the force signal is greater than a voltage of the low supply voltage source;
- and
- detecting an electrical short between adjacent terminals of at least one chip of the semiconductor device based on whether a voltage of the second terminal exceeds a reference voltage between the voltage of the low supply voltage source and the voltage of the force signal.
A method comprising:
- sensing an impedance through a first conductive path of between a first terminal of a top chip of a subset of chips of a stacked semiconductor device and a second terminal of a bottom chip of the subset of chips of the stacked semiconductor device by:
- providing a force signal to a first terminal of a top chip of the subset of chips of a stacked semiconductor device via a first switch on the first chip;
- sensing impedance along the first path based on a voltage difference between a voltage at the second terminal and a feedback voltage provided along a second propagation path from the first terminal to a third terminal of the bottom chip.
Dependencies are inferred from the claim text.