Dummy element and method of examining defect of resistive element

A method of examining a defect of a resistive element, using a dummy element including a lower insulating film deposited on a semiconductor substrate, a first resistive layer deposited on the lower insulating film, an interlayer insulating film covering the first resistive layer, a first pad-forming electrode deposited on the interlayer insulating film so as to be connected to the first resistive layer and including an extending portion to be in Schottky contact with the semiconductor substrate, a relay wire connected to the first resistive layer and connected to the semiconductor substrate with an ohmic contact, and a counter electrode allocated under the semiconductor substrate, the method comprising:

• measuring an electrical characteristic between the first pad-forming electrode and the counter electrode;
• measuring an electrical characteristic of the resistive element which is a target to be examined and to be simulated by the dummy element;
• and
• examining a defect of a structure included in the resistive element corresponding to the lower insulating film and the interlayer insulating film immediately under the first pad-forming electrode in accordance with a measurement result of the electrical characteristic of each of the dummy element and the resistive element.