Back to results
US 2020/0051868 A1Published application
Tapered fin-type field-effect transistors
AssigneeGlobalfoundries Inc.
InventorsHui Zang, Ruilong Xie, Garo Jacques Derderian
Life of this patent
Estimating the term…
Abstract
Device structures and fabrication methods for a field-effect transistor. A semiconductor fin includes a first section and a second section in a lengthwise arrangement, a first gate structure overlapping the first section of the semiconductor fin, and a second gate structure overlapping the second section of the semiconductor fin. A pillar is arranged in the first section of the semiconductor fin. The pillar extends through a height of the semiconductor fin and across a width of the semiconductor fin.
Claims20
A structure comprising:
- a first semiconductor fin including a first section and a second section in a lengthwise arrangement;
- a first pillar in the first section of the first semiconductor fin, the first pillar extending through a height of the first semiconductor fin and across a width of the first semiconductor fin;
- a first gate structure in an overlapping relationship with the first section of the first semiconductor fin;
- and
- a second gate structure in an overlapping relationship with the second section of the first semiconductor fin.
2 more elements
A method comprising:
- forming a semiconductor fin including a first section and a second section in a lengthwise arrangement;
- forming a first gate structure and a second gate structure arranged to respectively overlap with the first section of the semiconductor fin and the second section of the semiconductor fin;
- removing the first gate structure from the first section of the semiconductor fin to expose a first portion of the first section of the semiconductor fin;
- etching the first portion of the first section of the semiconductor fin to form a first cavity extending through a height of the semiconductor fin and across a width of the semiconductor fin;
- and
- forming a first dielectric material in a lower portion of the first cavity to thereby form a first pillar in the first section of the semiconductor fin.
3 more elements
Dependencies are inferred from the claim text.