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US 2020/0051867 A1Published application
Fin structures
AssigneeGlobalfoundries Inc.
InventorsFuad H. AL-AMOODY, Yiheng XU, Rishikesh KRISHNAN
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to fin structures and methods of manufacture. The structure includes: a plurality of fin structures formed of substrate material; a semiconductor material located between selected fin structures of the plurality of fin structures; and isolation regions within spaces between the plurality of fin structures.
Claims20
A structure, comprising:
- a plurality of fin structures formed of substrate material;
- a semiconductor material located between selected fin structures of the plurality of fin structures;
- and
- isolation regions within spaces between the plurality of fin structures.
1 more element
A method comprising:
- forming a plurality of fin structures;
- forming an insulator liner over the plurality of fin structures;
- depositing a conformally thick semiconductor material over and between the plurality of fin structures;
- etching the semiconductor material to a predetermined thickness;
- depositing insulator material over the etched semiconductor material;
- annealing the insulator material;
- and
- recessing the insulator material.
5 more elements
A method comprising:
- forming a plurality of fin structures from substrate material by etching first and second trenches in the substrate material to a first depth, wherein each of the second trenches has a width greater than any of the first trenches;
- forming a conformal dielectric layer on the substrate material and on the plurality of fin structures;
- filling the first trenches and lining the second trenches with conformal semiconductor material;
- and
- forming fin isolation regions within the first trenches and the second trenches.
2 more elements
Dependencies are inferred from the claim text.