Wafer processing method

A wafer processing method including a substrate and a device layer stacked over a surface of the substrate, the wafer having devices formed in respective regions divided in the device layer by a plurality of intersecting streets, the method comprising:

• a mask forming step of forming, on a back side of the wafer, a mask to be used in forming a plurality of etched grooves in the substrate along the streets from the back side of the wafer;
• a plasma etching step of applying plasma etching from the back side of the wafer through the mask after performing the mask forming step, thereby forming the etched grooves in the substrate along the streets;
• a pressing step of ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at a front side thereof on a mounting surface after performing the plasma etching step, thereby pressing the wafer at the regions surrounded by the etched grooves;
• and
• a tape bonding step of bonding a tape to the front side of the wafer before performing at least the pressing step,
• wherein the devices are separated from the tape after performing the pressing step.