US 2020/0051858 A1 · Conductive Feature Formation and Structure Using Bottom-Up Filling Deposition

Abstract

The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Claims20

Dependent claims

A structure comprising:

a first dielectric layer over a substrate;
a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal;
a second dielectric layer over the first dielectric layer;
and
a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer, and wherein the lower convex surface extends continuously from a from a first sidewall of a conductive barrier layer of the first conductive feature to a second sidewall of the conductive barrier layer of the first conductive feature.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/654,845Filed 16 Oct 2019

Priority

14 Mar 2018

Published

13 Feb 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification24 codes

H10P 70/234
During, before or after processing of insulating materials: the processing being the formation of vias or contact holes
H10W 20/0698
Of conductive parts of the interconnections: local interconnections
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/6219
Fin field-effect transistors [FinFET]: characterised by the source or drain electrodes

Conductive Feature Formation and Structure Using Bottom-Up Filling Deposition

Life of this patent

Conductive Feature Formation and Structure Using Bottom-Up Filling Deposition

Life of this patent

Abstract

Claims20