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US 2020/0051855 A1Published application
Method of Cleaning Wafer After CMP
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Hao Chung, Chang-Sheng Lin, Kuo-Feng Huang, Li-Chieh Wu, Chun-Chieh Lin
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Abstract
A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.
Claims20
A structure comprising:
- a first dielectric layer;
- a first contact plug in the first dielectric layer;
- a second contact plug in the first dielectric layer;
- a third contact plug overlying and contacting the first contact plug;
- a carbon-rich layer overlying and contacting the second contact plug, wherein the carbon-rich layer has a first carbon concentration higher than a second carbon concentration of the first contact plug;
- and
- a second dielectric layer over and contacting the carbon-rich layer.
4 more elements
A structure comprising:
- a semiconductor region;
- a first source/drain region and a second source/drain region extending into the semiconductor region;
- a first inter-layer dielectric over the first source/drain region and the second source/drain region;
- a first metal plug and a second metal plug in the first inter-layer dielectric, wherein the first metal plug and the second metal plug comprise a first top surface and a second top surface, respectively;
- a carbon-free feature over and contacting the first top surface;
- and
- a carbon-rich layer over and contacting the second top surface.
4 more elements
A structure comprising:
- a semiconductor region;
- a gate stack over the semiconductor region;
- a first source/drain region and a second source/drain region on opposing sides of the gate stack and extending into the semiconductor region;
- a first source/drain contact plug and a second source/drain contact plug over the first source/drain region and the second source/drain region, respectively;
- a conductive feature over and contacting a first top surface of the first source/drain contact plug;
- and
- a dielectric layer over and contacting a second top surface of the second source/drain contact plug, wherein the dielectric layer comprises organic amine.
4 more elements
Dependencies are inferred from the claim text.