Multi-Metal Fill with Self-Align Patterning

A method, comprising:

• forming a first, a second, and a third structure on a dielectric, wherein each of the first, second, and third structures comprises a mandrel between opposing spacers;
• forming a first opening in the dielectric between the first and second structures;
• forming a second opening in the dielectric between the second and third structures, wherein the first opening is taller than the second opening;
• disposing a first conductive material in the first and second openings with a metal oxide capping layer formed thereon;
• removing the mandrel from the second and third structures;
• etching the dielectric between the opposing spacers of the second and third structures to form third openings;
• and
• disposing a second conductive material, different from the first conductive material, in the third openings.

A method, comprising:

• forming, on a dielectric layer, a first patterned structure and a second patterned structure, wherein each of the first and second patterned structures comprises a center portion;
• forming a first opening in the dielectric layer self-aligned to a space between the first and second pattern structures;
• depositing, in the first opening, a first conductive material with a sacrificial metal oxide layer formed thereon;
• removing the center portion of the second patterned structure to farm a gap within the second patterned structure;
• etching the dielectric layer through the gap to form a second opening;
• and
• filling the second opening with a second conductive material.